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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS
VDSS ID25
RDS(on) trr
= 500 V = 30 A 200 m 200 ns
TO-247 AD (IXFH)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 5 TC = 25 C
Maximum Ratings 500 500 30 40 30 75 30 40 1.2 10 460 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C C
G D S D (TAB) D (TAB)
TO-268 (IXFT)
G
S D (TAB)
PLUS220 (IXFV)
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247, TO-3P) Mounting force (PLUS220, PLUS220SMD) PLUS220, PLUS220SMD TO-268 TO-247
300 260
PLUS220 SMD(IXFV..S)
1.13/10 Nm/lb.in 11 65/2.5 15 N/lb. 4 5 6 g g g
G S G = Gate S = Source D (TAB) D = Drain TAB = Drain
Symbol BVDSS VGS(th) IGSS IDSS RDS(on)
Test Conditions (TJ = 25 C, unless otherwise specified) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125 C
Characteristic Values Min. Typ. Max. 500 3.0 5.0 100 25 750 165 200 V V nA A A m
Features l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2006 IXYS All rights reserved
DS99414E(04/06)
IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS
Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 17 27 4150 VGS = 0 V, VDS = 25 V, f = 1 MHz 445 28 25 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 5 (External) 24 82 24 70 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 22 S pF pF pF ns ns ns ns nC nC nC 0.27 C/W (TO-247, PLUS220) 0.21 C/W
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCs
VDS= 20 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD trr IRM QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 30 90 1.5 A A V
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A; -di/dt = 100 A/s VR = 100 V; VGS = 0 V 6 0.6
200 ns A C
Characteristic Curves
Fig. 1. Output Characteristics @ 25C
30 27 24 21 VGS = 10V 8V 7V 60 50 70 VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
18 15 12 9 6 3 0 0 1 2 3 4 5 6 7 6V
40 30 20 10 0 0 3 6 9 12 15
7V
6V
18
21
24
27
30
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
V D S - Volts
6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS
Fig. 3. Output Characteristics @ 125C
30 27 24 VGS = 10V 8V 7V 3.4 3.1 VGS = 10V
Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
I D - Amperes
21 18 15 12 9 6 3 0 0 2 4 6 8 10 12 14 5V 6V
R D S ( o n ) - Normalized
2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 -50 -25 0 25 50 75 100 125 150 I D = 15A I D = 30A
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID
3.4 3.1 VGS = 10V TJ = 125 C 35 30 25
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
R D S ( o n ) - Normalized
2.8
I D - Amperes
TJ = 25 C 0 10 20 30 40 50 60 70 80
2.5 2.2 1.9 1.6 1.3 1 0.7
20 15 10 5 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
Fig. 7. Input Adm ittance
55 50 45 40 60 55 50 45 40 35 30 25 20 15 10 5 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 5 10
TC - Degrees Centigrade
Fig. 8. Transconductance
g f s - Siemens
TJ = -40 C 25 C 125 C
I D - Amperes
35 30 25 20 15 10 5 0 TJ = 125 C 25 C -40 C
15
20
25
30
35
40
45
50
55
V G S - Volts
I D - Amperes
(c) 2006 IXYS All rights reserved
IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS
Fig. 9. Source Current vs. Source-To-Drain Voltage
90 80 70 10 9 8 7 VDS = 250V I D = 15A I G = 10mA
Fig. 10. Gate Charge
I S - Amperes
60
VG S - Volts
TJ = 25 C 0.8 0.9 1 1.1
50 40 30 20 10 0 0.4 0.5 0.6 0.7 TJ = 125 C
6 5 4 3 2 1 0 0 10 20 30 40 50 60 70
V S D - Volts Fig. 11. Capacitance
10000 100
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
R DS(on) Limit
Capacitance - picoFarads
C iss
I D - Amperes
1000
25s 100s 1ms 10ms
C oss 100 C rs f = 1MHz 10 0 5 10 15 20 25 30 35 40
10
TJ = 150C TC = 25C 1 10
DC
100
1000
V D S - Volts
Fig. 13. M axim um Tr ans ie nt The r m al Re s is tance
1.00
V D S - Volts
R ( t h ) J C - C / W
0.10
0.01 0.1 1 10 100 1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS
Package Outline Drawings
TO-247 (IXFH) Outline TO-268 (IXFT) Outline PLUS220 (IXFV) Outline
1
2
3
Terminals: 1 - Gate 3 - Source
2 - Drain Tab - Drain
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
PLUS220SMD (IXFV_S) Outline
(c) 2006 IXYS All rights reserved

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